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| Datasheet File OCR Text: |
| PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.35 x 3.35 MILS Al - 30,000A Au-As - 13,000A GEOMETRY GROSS DIE PER 5 INCH WAFER 137,880 PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2838 CMPD7000 BACKSIDE CATHODE R0 R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD83V Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m |
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